FDB8442【PDF 2/7 页】MOSFET N-CH 40V 80A D2PAK

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MOSFET Maximum Ratings T C = 25°C unless otherwise noted

Symbol

V DSS

V GS

I D

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous (T C <158 o C, V GS = 10V)

Drain Current Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 43 o C/W)

Pulsed

Ratings

40

±20

80

28

See Figure 4

Units

V

V

A

E AS

P D

Single Pulse Avalanche Energy

Power Dissipation

Derate above 25 o C

(Note 1)

720

254

1.7

mJ

W

W/ o C

T J , T STG Operating and Storage Temperature

-55 to +175

o

C

Thermal Characteristics

R θ JC

Thermal Resistance Junction to Case

0.59

o

C/W

R θ JA

Thermal Resistance Junction to Ambient TO-263,

lin 2

copper pad area

43

o C/W

Package Marking and Ordering Information

Device Marking

FDB8442

Device

FDB8442

Package

TO-263AB

Reel Size

330mm

Tape Width

24mm

Quantity

800 units

Electrical Characteristics T J = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B VDSS

Drain to Source Breakdown Voltage

I D = 250 μ A, V GS = 0V

40

-

-

V

I DSS

I GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V DS = 32V

V GS = 0V

V GS = ± 20V

T J = 150°C

-

-

-

-

-

-

1

250

± 100

μ A

nA

On Characteristics

V GS(th)

Gate to Source Threshold Voltage

V DS = V GS , I D = 250 μ A

2

2.9

4

V

I D = 80A, V GS = 10V

-

2.1

2.9

r DS( on )

Drain to Source On Resistance

I D = 80A, V GS = 10V,

T J = 175°C

-

3.6

5.0

m ?

Dynamic Characteristics

C iss

C oss

C rss

R G

Q g(TOT)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge at 10V

V DS = 25V, V GS = 0V,

f = 1MHz

V GS = 0.5V, f = 1MHz

V GS = 0 to 10V

-

-

-

-

-

12200

1040

640

1.0

181

-

-

-

-

235

pF

pF

pF

?

nC

Q g(TH)

Q gs

Q gs2

Q gd

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

V GS = 0 to 2V

V DD = 20V

I D = 80A

I g = 1mA

-

-

-

-

23

49

26

41

30

-

-

-

nC

nC

nC

nC

FDB8442 Rev. C0

2

www.fairchildsemi.com

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